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IDT7143SA20PF Datasheet(PDF) 4 Page - Integrated Device Technology

Part # IDT7143SA20PF
Description  HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7143SA20PF Datasheet(HTML) 4 Page - Integrated Device Technology

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6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM
Military, Industrial and Commercial Temperature Ranges
4
Capacitance (TA = +25°C, f = 1.0mhz)
Recommended DC Operating
Conditions
Maximum Operating
Temperature and Supply Voltage(1,2)
Absolute Maximum Ratings(1)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (Either port, VCC = 5.0V ± 10%)
NOTE:
1.
At Vcc < 2.0V, input leakages are undefined.
NOTES:
1.
Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2.
VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
NOTES:
1.
This parameter is determined by device characterization but is not production
tested.
2.
3dV references the interpolated capacitance when the input and output switch from
0V to 3V or from 3V to 0V.
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
NOTES:
1.
VIL (min.) = -1.5V for pulse width less than 10ns.
2.
VTERM must not exceed Vcc + 10%.
Symbol
Rating
Commercial
& Industrial
Military
Unit
VTERM(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
TBIAS
Temperature
Under Bias
-55 to +125
-65 to +135
oC
TSTG
Storage
Temperature
-65 to +150
-65 to +150
oC
PT(3)
Power
Dissipation
2.0
2.0
W
IOUT
DC Output
Current
50
50
mA
2746 tbl 02
Grade
Ambient
Temperature
GND
Vcc
Military
-55OC to +125OC0V
5.0V
+ 10%
Commercial
0OC to +70OC0V
5.0V
+ 10%
Industrial
-40OC to +85OC0V
5.0V
+ 10%
2746 tbl 04
Symbol
Parameter
(1)
Conditions
(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
11
pF
COUT
Output Capacitance
VOUT = 3dV
11
pF
2746 tbl 03
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
VIH
Input High Voltage
2.2
____
6.0(2)
V
VIL
Input Low Voltage
-0.5(1)
____
0.8
V
2746 tbl 05
Symbol
Parameter
Test Conditions
7133SA
7143SA
7133LA
7143LA
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current
(1)
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5µA
|ILO|
Output Leakage Current
CE = VIH, VOUT = 0V to VCC
___
10
___
5µA
VOL
Output Low Voltage (I/O0-I/O15)IOL = 4mA
___
0.4
___
0.4
V
VOL
Open Drain Output Low Voltage
(
BUSY)
IOL = 16mA
___
0.5
___
0.5
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
2746 tbl 06


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