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MMBTA13 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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MMBTA13 Datasheet(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Transistors FEATURES • Darlington Amplifier Marking: MMBTA13 :K2D MMBTA14 :K3D Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V Collector Current -Continuous IC 0.3 A Collector Power dissipation PC 0.3 W Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 Thermal Resistance Junction to Ambient RθJA 417 /W ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCBO IC= 100 μA, IE=0 30 V Collector-emitter breakdown voltage VCEO IC= 100uA, IB=0 30 V Collector-emitter breakdown voltage VEBO IE= 100 μA, IC=0 10 V Collector cut-off current ICBO* VCB=30 V , IE=0 0.1 μA Emitter cut-off current IEBO* VEB= 10V , IC=0 0.1 μA DC current gain hFE(1) * VCE=5V, IC= 10mA MMBTA13 MMBTA14 5000 10000 hFE(2) * VCE=5V, IC= 100mA MMBTA13 MMBTA14 10000 20000 Collector-emitter saturation voltage VCE (sat)* IC=100mA, IB=0.1mA 1.5 V Base-emitter saturation voltage VBE (sat) * IC=100mA, IB=0.1mA 2 V Base-emitter voltage VBE * VCE=5V,IC= 100mA 2.0 V Transition frequency fT VCE=5V, IC= 10mA , f=100MHz 125 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 12 pF * Pulse Test : pulse width≤300μs,duty cycle≤2%. MMBTA13/14 (NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTO MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ |
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