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SCS220AE2C Datasheet(PDF) 1 Page - Rohm |
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SCS220AE2C Datasheet(HTML) 1 Page - Rohm |
1 / 6 page Datasheet www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. SCS220AE2 SiC Schottky Barrier Diode *1 Tc=137°C/Tc=137°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10 ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C *7 Per leg / Both legs 3) High-speed switching possible lOutline lInner circuit lPackaging specifications TO-247 2) Reduced temperature dependence 650V 10A/20A* VR IF QC lFeatures 15nC 1) Shorter recovery time A W Symbol lConstruction Silicon carbide epitaxial planer type Parameter V V A Tube - Type Packaging Reel size (mm) C SCS220AE2 Basic ordering unit (pcs) Tape width (mm) - 30 Marking Taping code 83/160* 6 40/80* 2 A A VRM Total power disspation *7 Junction temperature VR IF IFSM IFRM PD Reverse voltage (DC) Continuous forward current *7 650 10/20* 1 42/85* 5 150/300* 3 A *(Per leg / Both legs) 31/63* 4 °C °C Tj Tstg 175 -55 to +175 Range of storage temperature lAbsolute maximum ratings (Tj = 25°C) Surge no repetitive forward current *7 Reverse voltage (repetitive peak) Unit Value Repetitive peak forward current *7 650 (1) Anode (2) Cathode (3) Anode (1) (3) (2) (1) (2) (3) 1/5 2013.04 - Rev.B |
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