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SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop.

Guard Ring Construction For Transient

Protection.

Negligible Reverse Recovery Time.

Low Reverse Capacitance.

SD103AW :S4

SD103BW:S5

SD103CW:S6

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

SD103AW

SD103BW

SD103CW

Non-Repetitive Peak reverse voltage

V

40

30

20

V

Peak Repetitive Peak reverse voltage

V

V

Working Peak Reverse Voltage

V

V

DC Blocking

V

28

21

14

V

Forward Continuous Current

IF

350

mA

Repetitive Peak Forward Current @t≤1.0s

IFRM

1.5

A

Power Dissipation

Pd

400

mW

Thermal Resistance Junction to Ambient

RθjA

300

/W

Storage temperature

Tstg

-65-125

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse Breakdown Voltage

SD103AW

40

V

SD103BW

30

V

SD103CW

20

V

Forward voltage

0.37

0.60

V

V

IF=20mA

IF=200mA

Reverse current

SD103AW

5.0

μA

VR=30V

SD103BW

5.0

μA

VR=20V

SD103CW

5.0

μA

VR=10V

Capacitance between terminals

50

pF

VR=0,f=1MHz

Reverse Recovery Time

10

ns

IR=IF=200mA

Irr=0.1*IR,RL=100Ω

SOD-123

-

+

MARKING:

R

RWM

RRM

RM

SD103AW/BW/CW

Unit

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/