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AB28F200BR-T80 Datasheet(PDF) 5 Page - Intel Corporation

Part # AB28F200BR-T80
Description  2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Download  36 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

AB28F200BR-T80 Datasheet(HTML) 5 Page - Intel Corporation

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E
A28F200BR
5
ADVANCE INFORMATION
1.0
PRODUCT FAMILY OVERVIEW
This datasheet contains the specifications for the
automotive version of the 28F200BR family of boot
block flash memory devices.
This
device
continues
to
offer
the
same
functionality as earlier “BX” devices but adds the
capability
of
performing
program
and
erase
operations with a 5V or 12V VPP. The A28F200BR
automatically senses which voltage is applied to
the VPP pin and adjusts its operation accordingly.
1.1
New Features in the
SmartVoltage Products
The new SmartVoltage boot block flash memory
family offers identical operation as the current
BX/BL 12V program products, except for the
differences listed below. All other functions are
equivalent
to
current
products,
including
signatures, write commands, and pinouts.
• WP# pin has replaced a DU pin. See Table 1
for details.
• 5V program/erase operation has been added
that
uses
proven
program
and
erase
techniques with 5V ± 10% applied to VPP.
If you are designing with existing BX 12V VPP boot
block products today, you should provide the
capability in your board design to upgrade to these
new SmartVoltage products.
Follow these guidelines to ensure compatibilty:
1.
Connect WP# (DU on existing products) to a
control signal, VCC or GND.
2.
If adding a switch on VPP for write protection,
switch to GND for complete write protection.
3.
Allow for connecting 5V to VPP instead of 12V,
if desired.
1.2
Main Features
Intel’s SmartVoltage technology provides the most
flexible
voltage
solution
in
the
industry.
SmartVoltage provides two discrete voltage supply
pins, VCC for read operation, and VPP for program
and erase operation. Discrete supply pins allow
system designers to use the optimal voltage levels
for
their
design.
For
program
and
erase
operations, 5V VPP operation eliminates the need
for in system voltage converters, while 12V VPP
operation provides faster program and erase for
situations
where
12V
is
available,
such
as
manufacturing or designs where 12V is already
available.
The 28F200 boot block flash memory family is a
very high-performance, 2-Mbit (2,097,152 bit) flash
memory family organized as either 256 Kwords
(131,072 words) of 16 bits each or 512 Kbytes
(262,144 bytes) of 8 bits each.
Separately erasable blocks, including a hardware-
lockable boot block (16,384 bytes), two parameter
blocks (8,192 Bytes each) and main blocks (one
block of 98,304 bytes and one block of 131,072
bytes)
define
the
boot
block
flash
family
architecture. See Figure 3 for memory maps. Each
parameter block can be independently erased and
programmed 10,000 times. Each main block can
be erased 1,000 times.
The boot block is located at either the top
(denoted by -T suffix) or the bottom (-B suffix) of
the address map in order to accommodate
different microprocessor protocols for boot code
location.
The
hardware-lockable
boot
block
provides complete code security for the kernel
code required for system initialization. Locking and
unlocking of the boot block is controlled by WP#
and/or RP# (see Section 3.4 for details).
The Command User Interface (CUI) serves as the
interface
between
the
microprocessor
or
microcontroller and the internal operation of the
boot block flash memory products. The internal
Write
State
Machine
(WSM)
automatically
executes the algorithms and timings necessary for
program
and
erase
operations,
including
verifications,
thereby
unburdening
the
microprocessor or microcontroller of these tasks.
The Status Register (SR) indicates the status of
the WSM and whether it successfully completed
the desired program or erase operation.
Program and erase automation allows program
and erase operations to be executed using an
industry-standard two-write command sequence to
the CUI. Data writes are performed in word or byte
increments. Each byte or word in the flash
memory can be programmed independently of
other memory locations, unlike erases, which
erase all locations within a block simultaneously.
The 4-Mbit SmartVoltage boot block flash memory
family is also designed with an Automatic Power


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