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ISL9003AIRUNZ-T Datasheet(PDF) 10 Page - Intersil Corporation |
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ISL9003AIRUNZ-T Datasheet(HTML) 10 Page - Intersil Corporation |
10 / 12 page 10 All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9001 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN6299.5 July 18, 2014 Submit Document Feedback about 30µs/V to minimize current surge. The ISL9003A provides short-circuit protection by limiting the output current to about 265mA (typ). The LDO uses an independently trimmed 1V reference as its input. An internal resistor divider drops the LDO output voltage down to 1V. This is compared to the 1V reference for regulation. The resistor division ratio is programmed in the factory. Overheat Detection The bandgap outputs a proportional-to-temperature current that is indicative of the temperature of the silicon. This current is compared with references to determine if the device is in danger of damage due to overheating. When the die temperature reaches about +140 °C, the LDO momentarily shuts down until the die cools sufficiently. In the overheat condition, if the LDO sources more than 50mA it will be shut off. Once the die temperature falls back below about +110 °C, the disabled LDO is re-enabled and soft-start automatically takes place. Exposed Thermal Pad The ISL9003A with µTDFN package has an exposed thermal pad at the bottom side of the package. The PCB layout should connect the exposed pad to some copper on the component layer for a good thermal conductivity. Since the copper area on the component layer is limited by the surrounding pins of the package, it is more effective to use some thermal vias to conduct the heat to other copper layers if possible. Electrically the copper and vias connecting to the exposed pad should be isolated from any other pin connection, they are strictly for thermal enhancement purpose. ISL9003A |
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