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Die Characteristics

DIE DIMENSIONS:

(2440

µm x 2970µm x 533µm ±51µm)

96 x 117 x 21mils

±2mil

METALLIZATION:

Type: Al Si Cu

Thickness: 10.0k

Å

SUBSTRATE POTENTIAL:

Unbiased (Silicon on Sapphire)

Bond Pad #10 (GND) Uses Two Bond Wires

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 8.0k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

420

PROCESS:

CMOS SOS

Metallization Mask Layout

ACTS245T

DIR

A0

A1 (3)

A2 (4)

A3 (5)

A4 (6)

A5 (7)

A6 (8)

(10)

(11)

(12)

(13) B5

(14) B4

(15) B3

(16) B2

(17) B1

(18) B0

OE

VCC

(9)

(19)

(20)

(1)

(2)

A7

GND

B7

B6

(10)

GND

VCC

(20)

ACTS245T