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UPA810TC Datasheet(PDF) 3 Page - NEC

Part # UPA810TC
Description  NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA810TC Datasheet(HTML) 3 Page - NEC

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µPA810TC
Data Sheet P14550EJ1V0DS00
3
TYPICAL CHARACTERISTICS (TA = +25
°C)
Base to Emitter Voltage VBE (V)
Ambient Temperature TA (
°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs. BASE TO
EMITTER VOLTAGE
0
10
20
0
0.5
1.0
VCE = 3 V
0
100
200
230
0
50
100
150
0
5
10
15
20
25
012
3
4
5
6
0.00
1.00
2.00
3.00
4.00
5.00
6.00
1
10
100
10
100
1 000
0.1
1
10
100
2.00
4.00
6.00
8.00
10.00
12.00
14.00
1
10
100
2 Elements in total
Free Air
Per
Element
IB = 160 A
µ
IB = 140 A
µ
IB = 120 A
µ
IB = 100 A
µ
IB = 80 A
µ
IB = 60 A
µ
IB = 40 A
µ
IB = 20 A
µ
VCE = 3 V
f = 1 GHz
VCE = 3 V
f = 1 GHz
VCE = 3 V


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