FSPL230R4 datasheet(2/8 Pages) INTERSIL

Part #	FSPL230R4

Description	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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4-2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSPL230R, FSPL230F

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

200

V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

200

V

Continuous Drain Current

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

9A

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

5A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

29

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±30

V

Maximum Power Dissipation

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

25

W

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T

10

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.20

W/oC

Single Pulsed Avalanche Current, L = 100

µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . IAS

29

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

9A

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

29

A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

oC

Weight (Typical)

1.0 (Typical)

g

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

200

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS,

ID = 1mA

TC = -55

oC

-

5.5

V

TC = 25

oC

2.0

-

4.5

V

TC = 125

oC

1.0

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 160V,

VGS = 0V

TC = 25

oC-

-

25

µA

TC = 125

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±30V

TC = 25

oC

-

100

nA

TC = 125

oC

-

200

nA

Drain to Source On-State Voltage

VDS(ON)

VGS = 12V, ID = 9A

-

1.58

V

Drain to Source On Resistance

rDS(ON)12

ID = 5A,

VGS = 12V

TC = 25

oC

-

0.145

0.170

Ω

TC = 125

oC

-

0.313

Ω

Turn-On Delay Time

td(ON)

VDD = 100V, ID = 9A,

RL = 11Ω, VGS = 12V,

RGS = 7.5Ω

-

20

ns

Rise Time

tr

-

40

ns

Turn-Off Delay Time

td(OFF)

-

35

ns

Fall Time

tf

-

15

ns

Total Gate Charge

Qg(12)

VGS = 0V to 12V

VDD = 100V,

ID = 9A

-30

33

nC

Gate Charge Source

Qgs

-10

12

nC

Gate Charge Drain

Qgd

-

8

10

nC

Gate Charge at 20V

Qg(20)

VGS = 0V to 20V

-

45

-

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

-

3

-

nC

Plateau Voltage

V(PLATEAU) ID = 9A, VDS = 15V

-

6.5

-

V

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

-

1400

-

pF

Output Capacitance

COSS

-

230

-

pF

Reverse Transfer Capacitance

CRSS

-8-

pF

Thermal Resistance Junction to Case

R

θJC

-

5.0

oC/W

FSPL230R, FSPL230F

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