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FSYA250R4 Datasheet(PDF) 2 Page - Intersil Corporation |
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FSYA250R4 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 8 page 3-126 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSYA250D, FSYA250R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 200 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V Continuous Drain Current TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 27 A TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 17 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 81 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 150 W TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 60 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS 81 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 27 A Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 81 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - 5.0 V TC = 25 oC 1.5 - 4.0 V TC = 125 oC 0.5 - - V Zero Gate Voltage Drain Current IDSS VDS = 160V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V TC = 25 oC - - 100 nA TC = 125 oC - 200 nA Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 27A - 2.84 V Drain to Source On Resistance rDS(ON)12 ID = 17A, VGS = 12V TC = 25 oC - 0.080 0.100 Ω TC = 125 oC - - 0.182 Ω Turn-On Delay Time td(ON) VDD = 100V, ID = 27A, RL = 3.70Ω, VGS 12V, RGS = 2.35Ω - - 45 ns Rise Time tr - - 110 ns Turn-Off Delay Time td(OFF) - - 90 ns Fall Time tf - - 25 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 100V, ID = 27A - - 230 nC Gate Charge at 12V Qg(12) VGS = 0V to 12V - 130 150 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 11 nC Gate Charge Source Qgs -26 40 nC Gate Charge Drain Qgd -65 78 nC Plateau Voltage V(PLATEAU) ID = 27A, VDS = 15V - 8 - V Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 3200 - pF Output Capacitance COSS - 625 - pF Reverse Transfer Capacitance CRSS - 170 - pF Thermal Resistance Junction to Case R θJC - - 0.83 oC/W FSYA250D, FSYA250R |
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Similar Description - FSYA250R4 |
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