3

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

0.6

-

1.8

V

Reverse Recovery Time

-

-

620

ns

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Drain to Source Breakdown Volts

(Note 3)

100

-

V

Gate to Source Threshold Volts

(Note 3)

1.5

4.0

V

Gate to Body Leakage

(Notes 2, 3)

-

100

nA

Zero-Gate Leakage

(Note 3)

-

25

µA

Drain to Source On-State Volts

(Notes 1, 3)

-

1.62

V

Drain to Source On Resistance

(Notes 1, 3)

-

0.022

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

(V)

(NOTE 6)

MAXIMUM

(V)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating

Area

SEESOA

Ni

26

43

-20

100

Br

37

36

-10

100

Br

37

36

-15

80

Br

37

36

-20

50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

120

100

80

60

40

20

0

0

-10

-15

-20

-25

-5

µ

µ

300

100

10

DRAIN SUPPLY (V)

1000

ILM = 10A

300A

1E-4

1E-5

1E-6

30

100A

30A

1E-7

1E-3

FSYC160D, FSYC160R