1

July 1998

FSYC260D,

FSYC260R

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

• Dose Rate

• Photo Current

- 17nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Formerly available as type TA17667.

Description

The Discrete Products Operation of Intersil has developed a

series

of

Radiation

Hardened

MOSFETs

specifically

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environ-

ments. The dose rate and neutron tolerance necessary for

military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

field-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent

of

MIL-S-19500,

or

Space

equivalent

of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

Packaging

SMD-2

Ordering Information

RAD LEVEL

SCREENING LEVEL

PART NO./BRAND

10K

Commercial

FSYC260D1

10K

TXV

FSYC260D3

100K

Commercial

FSYC260R1

100K

TXV

FSYC260R3

100K

Space

FSYC260R4

D

G

S

File Number

4549

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207