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2SD1622-T Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1622-T Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1622 ■ Features ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. ● Complementary to 2SB1122 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A PC W Note.1:Mounted on ceramic board (250mm ×0.8mm) 2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.12 0.3 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50 mA 0.9 1.2 VCE= 2V, IC= 100 mA 100 560 VCE= 2V, IC= 1 A 30 Turn-ON Time ton 40 Storage Time tstg 350 Fall Time tf 30 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 8.5 pF Transition frequency fT VCE= 10V, IC= 50mA 150 MHz See specified Test Circuit. ns V uA DC current gain hFE V 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Classification of hfe(1) Type 2SD1622-R 2SD1622-S 2SD1622-T 2SD1622-U Range 100-200 140-280 200-400 280-560 Marking DE R* DE S* DE T* DE U* |
Similar Part No. - 2SD1622-T |
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Similar Description - 2SD1622-T |
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