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HCTS10D Datasheet(PDF) 5 Page - Intersil Corporation

Part # HCTS10D
Description  Radiation Hardened Triple 3-Input NAND Gate
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HCTS10D Datasheet(HTML) 5 Page - Intersil Corporation

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Specifications HCTS10MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V
± 0.5V
VCC = 6V
± 0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
6, 8, 12
1, 2, 3, 4, 5, 7, 9, 10, 11,
13
-14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
6, 8, 12
7
-
1, 2, 3, 4, 5, 9, 10,
11, 13, 14
--
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
6, 8, 12
14
1, 2, 3, 4, 5, 9,
10, 11, 13
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10K
Ω± 5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1K
Ω± 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V
± 0.5V
6, 8, 12
7
1, 2, 3, 4, 5, 9, 10, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47K
Ω± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
518778


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