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Die Characteristics

DIE DIMENSIONS:

(2743

µm x 2692µm x 533µm ±51µm)

108 x 106 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11k

Å

SUBSTRATE POTENTIAL:

Unbiased (Silicon on Sapphire)

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

376

PROCESS:

CMOS SOS

Metallization Mask Layout

HCTS373T

OE

(1)

Q7

(19)

(20)

Q0

(2)

D1 (4)

D0

(3)

Q1 (5)

Q2 (6)

D2 (7)

(8)

(9)

(10)

(11)

(12)

(13)

D3

Q3

GND

LE

Q4

D4

(14) D5

(15) Q5

(16) Q6

(17) D6

(18) D7

NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask

series for the HCTS373 is TA14403A.

HCTS373T