4-3

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Die Characteristics

DIE DIMENSIONS:

(2261

µm x 2235µm x 533µm ±51µm)

89 x 88 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11k

Å

SUBSTRATE POTENTIAL:

Unbiased (Silicon on Sapphire)

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

200

PROCESS:

CMOS SOS

Metallization Mask Layout

HCTS74T

R1

CP1 (3)

S1 (4)

Q1 (5)

Q1 (6)

(8)

(9)

(10) S2

(11) CP2

(12) D2

(13) R2

(1)

(14)

Q2

Q2

D1

(2)

NC

NC

(7)

GND

NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask

series for the HCTS74 is TA14438A.

HCTS74T