Silicon Photo Transistor

1. Structure

1.1 Chip Size : 0.61mm X 0.61mm

1.2 Chip thickness : 280±20um

1.3 Metallization : Top - Al, Bottom - Au

1.4 Passivation : Silicon Nitride

1.5 Bonding Pad Size

- Emitter : 155um X 155um

- Base : 90um X 90um

2. Guaranteed Probed Electrical Characteristics

(Ta=25℃)

Symbol

Min

Typ

Max

Unit

100

nA

λ

450

1100

nm

λp

880

nm

30

V

40

V

5V

4V

300

mV

tr/tf

us

1,000

2,200

-

3. Hfe Bin Grade

MIN

MAX

1,000

1,500

1,200

1,800

1,500

2,200

4. Maximum Ratings

(Ta=25℃)

Symbol

Rating

Unit

30

V

4V

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel.

+82 63 839 1111

Fax.

+82 63 835 8259

www.auk.co.kr

Bin Grade

A

C-B Voltage

AUK Corp.

Rise/Fall Time

C-E Saturation Voltage

E-B Voltage

Parameter

B

C

Emitter-Collector Voltage

Collector-Emitter Voltage

DC Current Gain

OPB0606

Condition

15/15(Typ)

Parameter

C-E Leakage Current

E-C Voltage

Spectrum Sensitivity

C-E Voltage

Peak Sensing Wavelength