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2SC3356-R25 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3356-R25 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type SMD Type Transistors 1 www.kexin.com.cn NPN Transistors 2SC3356 Features Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b o t r o t c e ll o C CBO 20 V V e g a tl o v r e tt i m e o t r o t c e ll o C CEO 12 V V e g a tl o v e s a b o t r e tt i m E EBO 3.0 V I ) C D ( t n e r r u c r o t c e ll o C C 100 mA P n o it a p i s s i d r e w o p l a t o T tot 200 mW T e r u t a r e p m e t n o it c n u J j 150 T e g n a r e r u t a r e p m e t e g a r o t S stg -65 to +150 hFE Classification Electrical Characteristics Ta = 25 *. Pulse measurement: PW 350 s, Duty Cycle 2%. 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 1. Base 2. Emitter 3. Collector 0.15 +0.02 -0.02 Type 2SC3356-R23 2SC3356-R24 2SC3356-R25 2SC3356-R26 Range 50-100 80-160 125-250 250-400 Marking R23 R24 R25 R26 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 12 Emitter - base breakdown voltage VEBO IE= 100 uA, IC= 0 3 Collector-base cut-off current ICBO VCB= 10 V , IE= 0 1 Emitter cut-off current IEBO VEB= 3V , IC=0 1 Collector-emitter saturation voltage * VCE(sat) IC=50 mA, IB=5mA 0.4 Base - emitter saturation voltage * VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain * hFE VCE= 10V, IC= 20mA 50 400 Insertion power gain |S21e | VCE = 10 V, IC = 20 mA, f= 1GHz 11.5 Noise figure NF VCE = 10 V, IC = 7 mA, f= 1GHz 1.1 2 Reverse transfer capacitance Cre VCB= 10V, IE= 0,f=1MHz 0.55 1 pF Transition frequency fT VCE= 10V, IC= 20mA 7 GHz V uA V dB 2 |
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