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FDT86244 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # FDT86244
Description  N-Channel Enhancement MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

FDT86244 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
N-Channel Enhancement MOSFET
FDT86244
■
Features
●
VDS (V) = 150V
●
ID = 2.8 A (VGS = 10V)
●
RDS(ON) ＜ 285mΩ (VGS = 10V)
●
RDS(ON) ＜ 305mΩ (VGS = 6V)
S
G
D
D
■
Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
VDS
150
VGS
±20
Ta=25℃
2.8
12
Ta=25℃
2.2
Ta=25℃
1.0
EAS
12
mJ
RthJA
55
RthJC
12
TJ
150
Tstg
-55 to 150
W
℃
/W
℃
Single Pulsed Avalanche Energy
(Note.3)
Junction Temperature
Parameter
Continuous Drain Current
ID
Drain-Source Voltage
Gate-Source Voltage
V
A
Storage Temperature Range
PD
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
(Note.1)
(Note.2)
Note1: 55 °C/W when mounted on a 1 in 2 pad of 2 oz copper
Note2: 118 °C/W when mounted on a minimum pad of 2 oz copper
Note3: Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 5 A, VDD = 135 V, VGS = 10 V.
(Note.1)
0.70±0.1
4.60 (typ)
6.50±0.2
3.00±0.1
2.30 (typ)
SOT-223
Unit:mm
1.Gate
2.Drain
3.Source
4.Drain
4
1
2
3
0.250
Gauge Plane


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