SI2312DS datasheet(2/4 Pages) KEXIN

Part #	SI2312DS

Description	N-Channel Enhancement MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

N-Channel Enhancement MOSFET

SI2312DS (KI2312DS)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

20

V

VDS=20V, VGS=0V

1

VDS=20V, VGS=0V, Ta=70℃

75

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±8V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

0.45

0.65

0.85

V

On-State Drain Current *1

ID(on)

VDS ≥ 10 V, VGS = 4.5 V

15

A

VGS=4.5V, ID=5.0A

27

33

VGS=2.5V, ID=4.5A

33

40

VGS=1.8V, ID=4.0A

42

51

Forward Transconductance *1

gFS

VDS=15V, ID=5.0A

40

S

Total Gate Charge

Qg

11.2

14

Gate Source Charge

Qgs

1.4

Gate Drain Charge

Qgd

2.2

Turn-On DelayTime

td(on)

15

25

Turn-On Rise Time

tr

40

60

Turn-Off DelayTime

td(off)

48

70

Turn-Off Fall Time

tf

31

45

Body Diode Reverse Recovery Time

trr

IF= 1.0A, dI/dt= 100A/μs

13

25

Maximum Body-Diode Continuous Current

IS

1.0

A

Diode Forward Voltage

VSD

IS=1.0A,VGS=0V

0.8

1.2

V

RDS(On)

mΩ

ID=1.0A, VDS=10V, ,VGEN=4.5V

RL=10Ω,RG=6Ω

nC

ns

Zero Gate Voltage Drain Current

IDSS

μ

A

VGS=4.5V, VDS=10V, ID=5.0A

Static Drain-Source On-Resistance *1

*1 Pulse test: PW ≤ 300us duty cycle≤ 2%.

■

Marking

C2*

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SI2312DS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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