SNN01Z10D datasheet(1/8 Pages) KODENSHI

Part #	SNN01Z10D

Description	Logic level N-CH Power MOWFET

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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Rev. date: 17-JAN-12

KSD-T6O039-000

www.auk.co.kr

1 of 8

SNN01Z10D

Logic Level N-Ch Power MOSFET

Logic Level Gate Drive Application

Features

 Logic level gate drive

 Max. RDS(ON) = 0.24 at VGS = 10V, ID = 0.5A

 Low RDS(on) provides higher efficiency

 ESD protected: 2000V (HBM ±1000V)

 Halogen free and RoHS compliant device

Ordering Information

Part Number

Marking

Package

SNN01Z10D

SNN01Z10

TO-252

Marking Information

Absolute maximum ratings (T

C=25C unless otherwise noted)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDSS

100

V

Gate-source voltage

VGSS

20

V

Drain current (DC) *

ID

Tc=25C

1

A

Tc=100C

0.63

A

Drain current (Pulsed) *

IDM

4

A

Single pulsed avalanche energy (Note 2)

EAS

35

mJ

Repetitive avalanche current (Note 1)

IAR

1

A

Repetitive avalanche energy (Note 1)

EAR

1.8

mJ

Power dissipation

PD

18

W

Junction temperature

TJ

150

C

Storage temperature range

Tstg

-55~150

C

* Limited only maximum junction temperature

TO-252

S

SNN

01Z10

YWW

Column 1, 2: Device Code

Column 3: Production Information

e.g.) YWW

-. YWW: Date Code (year, week)

D

G

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SNN01Z10D Datasheet(PDF) 1 Page - KODENSHI_AUK CORP.

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