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SNN01Z10D Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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SNN01Z10D Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 8 page Rev. date: 17-JAN-12 KSD-T6O039-000 www.auk.co.kr 1 of 8 SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features Logic level gate drive Max. RDS(ON) = 0.24 at VGS = 10V, ID = 0.5A Low RDS(on) provides higher efficiency ESD protected: 2000V (HBM ±1000V) Halogen free and RoHS compliant device Ordering Information Part Number Marking Package SNN01Z10D SNN01Z10 TO-252 Marking Information Absolute maximum ratings (T C=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS 20 V Drain current (DC) * ID Tc=25C 1 A Tc=100C 0.63 A Drain current (Pulsed) * IDM 4 A Single pulsed avalanche energy (Note 2) EAS 35 mJ Repetitive avalanche current (Note 1) IAR 1 A Repetitive avalanche energy (Note 1) EAR 1.8 mJ Power dissipation PD 18 W Junction temperature TJ 150 C Storage temperature range Tstg -55~150 C * Limited only maximum junction temperature TO-252 S SNN 01Z10 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) D G |
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