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SNN5010D Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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SNN5010D Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 8 page KSD-T6O016-001 1 SNN5010D Advanced N-Ch Power MOSFET PIN Connection G D S TO-252 D S G DC/DC CONVERTER APPLICATIONS Features • High Voltage : BVDSS=100V(Min.) • Low Crss : Crss=130pF(Typ.) • Low gate charge : Qg=75nC(Typ.) • Low RDS(ON) : RDS(ON)=26mΩ(Max.) Ordering Information Marking Diagram Absolute maximum ratings (T C=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 V (TC=25℃) 50 Drain current (DC) * ID (TC=100℃) 31 A Drain current (Pulsed) * IDM 150 A Power dissipation PD 65 W Avalanche current (Single) ② IAS 25 A Single pulsed avalanche energy ② EAS 173 mJ Avalanche current (Repetitive) ① IAR 50 A Repetitive avalanche energy ① EAR 6.5 mJ Junction temperature TJ 150 Storage temperature range Tstg -55~150 °C * Limited by maximum junction temperature Characteristic Symbol Typ. Max. Unit Junction-case Rth(J-C) - 1.92 Thermal resistance* Junction-ambient Rth(J-A) - 62.5 /W ℃ Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week) Type No. Marking Package Code SNN5010D SNN5010 TO-252 SNN 5010 YWW |
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