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MTB09P03E3 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTB09P03E3
Description  P-Channel Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB09P03E3 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C808E3
Issued Date : 2014.12.22
Revised Date :
Page No. : 5/8
MTB09P03E3
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50
75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-250μA
ID=-1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-ID, Drain Current(A)
VDS=-5V
Pulsed
Ta=25°C
Gate Charge Characteristics
0
2
4
6
8
10
0
10203040
50607080
Total Gate Charge---Qg(nC)
VDS=-24V
ID=-25A
Maximum Safe Operating Area
0.1
1
10
100
1000
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100μs
10μs
RDS(ON)
Limit
TC=25°C, Tj=175°C,
VGS=-10V,RθJC=1.7°C/W
single pulse
Maximum Drain Current vs Case Temperature
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
200
TC, Case Temperature(°C)
VGS=10V, RθJC=1.7°C/W


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