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MTBA6C15Q8 Datasheet(PDF) 8 Page - Cystech Electonics Corp.

Part # MTBA6C15Q8
Description  N- AND P-Channel Logic Level Enhancement Mode MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTBA6C15Q8 Datasheet(HTML) 8 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C938Q8
Issued Date : 2014.12.01
Revised Date :
Page No. : 8/12
MTBA6C15Q8
CYStek Product Specification
Typical Characteristics(Cont.) : Q2(P-channel)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=-250μA
ID=-1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
VDS=-10V
Pulsed
TA=25°C
Gate Charge Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
ID=-1.5A
VDS=-75V
VDS=-30V
VDS=-120V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
1000
-ID, Drain-Source Voltage(V)
DC
10ms
100ms
100μs
TA=25°C, Tj=175°C, VGS=-10V
θJA=78°C/W, Single Pulse
1s
1ms
Maximum Drain Current vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, Tj=175°C, VGS=-10V
RθJA=78°C/W


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