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MTBA6C15Q8-0-T3-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTBA6C15Q8-0-T3-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 12 page CYStech Electronics Corp. Spec. No. : C938Q8 Issued Date : 2014.12.01 Revised Date : Page No. : 2/12 MTBA6C15Q8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown Voltage BVDSS 150 -150 Gate-Source Voltage VGS ± 20 ± 20 V TC=25 °C, VGS=10V (-10V) 3.2 -2.6 Continuous Drain Current TC=100 °C, VGS=10V (-10V) ID 2.3 -1.8 TA=25 °C, VGS=10V (-10V) 1.8 -1.5 Continuous Drain Current (Note 2) TA=70 °C, VGS=10V (-10V) IDSM 1.5 -1.3 Pulsed Drain Current (Note 1) IDM 10 -8 A Power Dissipation for Dual Operation @TC=25°C PD 6 Power Dissipation for Dual Operation @TA=25°C 3 1.9 (Note 2) Power Dissipation for Single Operation @TA=25°C PDSM 1.1 (Note 3) W Operating Junction and Storage Temperature Range Tj; Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 50 78 (Note 2) Thermal Resistance, Junction-to-ambient, max Rth,j-a 135 (Note 3) °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s, single operation. 3.Surface mounted on minimum copper pad, pulse width≤10s, single operation. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V, ID=250μA ∆BVDSS /∆Tj - 0.14 - V/ °C Reference to 25 °C, ID=250μA VGS(th) 1.3 - 2.3 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V - - 1 μA VDS=120V, VGS=0V IDSS - - 10 μA VDS=120V, VGS=0, Tj=55 °C - 169 230 ID=1.8A, VGS=10V *RDS(ON) - 176 250 m Ω ID=1.5A, VGS=4.5V *GFS - 7 - S VDS=10V, ID=1.8A Dynamic Ciss - 465 - Coss - 45 - Crss - 26 - pF VDS=25V, VGS=0, f=1MHz |
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