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HIP6002 Datasheet(PDF) 10 Page - Intersil Corporation |
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HIP6002 Datasheet(HTML) 10 Page - Intersil Corporation |
10 / 12 page 10 the upper MOSFET switching losses. Ensure that both MOSFETs are within their maximum junction temperature at high ambient temperature by calculating the temperature rise according to package thermal-resistance specifications. A separate heatsink may be necessary depending upon MOSFET power, package type, ambient temperature and air flow. Standard-gate MOSFETs are normally recommended for use with the HIP6002. However, logic-level gate MOSFETs can be used under special circumstances. The input voltage, upper gate drive level, and the MOSFET’s absolute gate-to-source voltage rating determine whether logic-level MOSFETs are appropriate. Figure 10 shows the upper gate drive (BOOT pin) supplied by a bootstrap circuit from VCC. The boot capacitor, CBOOT develops a floating supply voltage referenced to the PHASE pin. This supply is refreshed each cycle to a voltage of VCC less the boot diode drop (VD) when the lower MOSFET, Q2 turns on. Logic-level MOSFETs can only be used if the MOSFET’s absolute gate-to-source voltage rating exceeds the maximum voltage applied to VCC. Figure 11 shows the upper gate drive supplied by a direct connection to VCC. This option should only be used in converter systems where the main input voltage is +5 VDC or less. The peak upper gate-to-source voltage is approximately VCC less the input supply. For + 5V main power and + 12 VDC for the bias, the gate-to-source voltage of Q1 is 7V. A logic-level MOSFET is a good choice for Q1 and a logic-level MOSFET can be used for Q2 if its absolute gate-to-source voltage rating exceeds the maximum voltage applied to VCC. Schottky Selection Rectifier D2 is a clamp that catches the negative inductor swing during the dead time between turning off the lower MOSFET and turning on the upper MOSFET. The diode must be a Schottky type to prevent the lossy parasitic MOSFET body diode from conducting. It is acceptable to omit the diode and let the body diode of the lower MOSFET clamp the negative inductor swing, but efficiency will drop one or two percent as a result. The diode’s rated reverse breakdown voltage must be greater than the maximum input voltage. HIP6002 DC-DC Converter Application Circuit Figure 12 shows an application circuit of a DC-DC Converter for an Intel Pentium Pro microprocessor. Detailed information on the circuit, including a complete Bill-of-Materials and circuit board description, can be found in Application Note AN9668. See Intersil’s home page on the web: www.intersil.com or Intersil AnswerFAX (321-724-7800) document # 99668. +12V PGND HIP6002 GND LGATE UGATE PHASE BOOT VCC +5V OR +12V NOTE: NOTE: VG-S ≈ VCC CBOOT DBOOT Q1 Q2 + - FIGURE 10. UPPER GATE DRIVE - BOOTSTRAP OPTION VG-S ≈ VCC -VD VD + D2 - +12V PGND HIP6002 GND LGATE UGATE PHASE BOOT VCC +5V OR LESS NOTE: NOTE: VG-S ≈ VCC Q1 Q2 + - FIGURE 11. UPPER GATE DRIVE - DIRECT VCC DRIVE OPTION VG-S ≈ VCC -5V D2 HIP6002 |
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