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Die Characteristics

DIE DIMENSIONS:

45 mils x 47 mils x 11 mils

1140

µm x 1190µm x 280µm

INTERFACE MATERIALS:

Glassivation:

Type: Silox

Thickness: 8k

Å

Top Metallization:

Type: T.W.

Thickness: 2.5k

Å

Type: Al

Thickness: 14k

Å

Substrate:

ALPS Bipolar/Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

9

Metallization Mask Layout

HS-246RH

HS-248RH

OUTPUT R1

(-) INPUT

(+) INPUT

VEE R1 AND R2

VEE R3

OUTPUT R3

3

VEE R1 AND R2

VEE R3

OUTPUT R3

OUTPUT R1

(-) INPUT

(+) INPUT

HS-246RH, HS-248RH