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Die Characteristics

DIE DIMENSIONS:

65 mils x 57 mils x 19 mils

(1660

µm x 1950µm x 483µm)

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 7k

Å

Top Metallization:

Type: Aluminum

Thickness: 16k

Å

Substrate:

Linear Bipolar, DI

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential (Powered Up):

Unbiased

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

40

Die Attach:

Metallization Mask Layout

HS-2510RH

V+

OUT

BAL

V-

+IN

-IN

BAL

COMP

HS-2510RH