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Die Characteristics

DIE DIMENSIONS:

4890

µm x 3370µm (193 mils x 133 mils)

Thickness: 483

µm ± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ

± 1.0kÅ

Top Metallization:

Type: AlSiCu

Thickness: 16.0kÅ

± 2kÅ

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

125

Metallization Mask Layout

HS-4423RH, HS-4423BRH

GND (5)

IN B (7)

OUT B (10)

OUT B (11)

GND (4)

IN A (2)

OUT A (15)

OUT A (14)

HS-4423RH, HS-4423BRH