828

Specifications HS-65647RH

Write Enable High to Out-

put ON

TWHQX

VDD = 4.5V and 5.5V

1

≤ T

-

ns

Chip Enable to Output ON

TE1LQX

TE2HQX

VDD = 4.5V and 5.5V

1

≤ T

-

ns

Output Enable to Output

ON

TGLQX

VDD = 4.5V and 5.5V

1

≤ T

-

ns

Chip Enable to Output in

High Z

TE1HQZ

TE2LQZ

VDD = 4.5V and 5.5V

1

≤ T

-

15

ns

Output Disable to Output in

High Z

TGHQZ

VDD = 4.5V and 5.5V

1

≤ T

-

15

ns

Output Hold from Address

Change

TAXQX

VDD = 4.5V and 5.5V

1

≤ T

-

ns

NOTES:

1. The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are

characterized upon initial design release and upon design changes which would affect these characteristics.

2. Applies to DIP device types only.

3. Applies to Flatpack device types only.

4. All measurements referenced to device GND.

TABLE 4. POST 300K RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Standby Supply Current

IDDSB

VDD = 5.5V, IO = 0mA, E1 = VDD,

E2 = 0V, VI = VDD or GND

-

10

mA

Enabled Supply Current

IDDEN

VDD = 5.5V, IO = 0mA, E1 = 0.0V,

E2 = VDD, VI = VDD or GND

-

82

mA

Operating Supply Current

(Note 2)

IDDOP

VDD = 5.5V, IO = 0mA, f = 2MHz,

E = 0V,VI = VDD or GND

-

100

mA

Data Retention Supply Current

IDDDR

VDD = 2.0V, IO = 0mA, E = VDD

6

mA

NOTES:

irradiation test limits.

2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

PARAMETER

SYMBOL

CONDITIONS

NOTES

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Spec Number

518729