826

Specifications HS-65647RH

Absolute Maximum Ratings

Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V

Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V

Typical Derating Factor. . . . . . . . . . . . 3mA/MHz Increase in IDDOP

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

Thermal Resistance

θ

JA

θ

JC

28 Lead SBDIP Package. . . . . . . . . . . . .

28/36 Lead Ceramic Flatpack Package. .

28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W

28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . . . . . 0.94W

If device power exceeds package dissipation capability, provide heat

sinking or derate linearly at the following rate:

28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . .22.2mW/C

28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . .18.7mW/C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Voltage Range (VDD) . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . 0V to +0.2VDD

Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . .0.8VDD to VDD

Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V

Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max.

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTE 1)

CONDITIONS

GROUP A

SUBGROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

High Level Output

Voltage

VOH

VDD = 4.5V, IO = -5mA

VI = VDD or GND

1, 2, 3

VDD-

0.4

-V

Low Level Output

Voltage

VOL

VDD = 4.5V, IO = 8.0mA

VI = VDD or GND

1, 2, 3

-

0.4

V

High Impedance Output

Leakage Current

IOZL or

IOZH

VDD = 5.5V, VO = GND or

VDD, VI = VDD or GND

E1 = VDD, E2 = 0V

1, 3

-10

10

µA

2

-30

30

µA

2

-60

60

µA

Input Leakage Current

IIH or IIL

VDD = 5.5V, VI = VDD or

GND

1, 2, 3

-1.0

1.0

µA

Standby Supply Current

IDDSB

(Note 3)

VDD = 5.5V, IO = 0mA,

VI = VDD or GND

E1 = VDD, E2 = 0V

1, 3

-

500

µA

2

4

mA

2

-

10

mA

Enable Supply Current

IDDEN

VDD = 5.5V, IO = 0mA,

VI = VDD or GND

E1 = 0.0V, E2 = VDD

3

-

77

mA

1

-

73

mA

2

-

64

mA

Operating Supply

Current (Note 2)

IDDOP

VDD = 5.5V, IO = 0mA,

VI = VDD or GND,

E2 = VDD, E1 = 0V,

f = 2MHz

3

-

100

mA

1

-

86

mA

2

-

75

mA

Data Retention Supply

Current

IDDDR

VDD = 2.0V, IO = 0mA,

VI = VDD or GND

E1 = VDD, E2 = 0V

1, 3

50

µA

2

1

mA

2

4

mA

Functional Tests

FT

VDD = 4.5V and 5.5V

VI = VDD or GND, f = 1MHz

7, 8A, 8B

--

-

Noise Immunity

Functional Test

FN

VDD = 4.5, VIL = 0.2 VDD

VIH = 0.8 VDD, f = 1MHz

7, 8A, 8B

--

-

NOTES:

1. All voltages referenced to device GND.

2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)

3. In order for this device to be in low power standby mode. E2 must be disabled (low).

Spec Number

518729