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HS-65647RH Datasheet(PDF) 3 Page - Intersil Corporation |
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HS-65647RH Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 16 page 826 Specifications HS-65647RH Absolute Maximum Ratings Reliability Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Typical Derating Factor. . . . . . . . . . . . 3mA/MHz Increase in IDDOP ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θ JA θ JC 28 Lead SBDIP Package. . . . . . . . . . . . . 45oC/W 8.0oC/W 28/36 Lead Ceramic Flatpack Package. . 53.4oC/W 7.4oC/W Maximum Package Power Dissipation at +125oC Ambient 28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W 28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . . . . . 0.94W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: 28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . .22.2mW/C 28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . .18.7mW/C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Voltage Range (VDD) . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range (TA) . . . . . . . . . . . . -55 oC to +125oC Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . 0V to +0.2VDD Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . .0.8VDD to VDD Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL (NOTE 1) CONDITIONS GROUP A SUBGROUPS TEMPERATURE LIMITS UNITS MIN MAX High Level Output Voltage VOH VDD = 4.5V, IO = -5mA VI = VDD or GND 1, 2, 3 -55oC, +25oC, +85oC, +125oC VDD- 0.4 -V Low Level Output Voltage VOL VDD = 4.5V, IO = 8.0mA VI = VDD or GND 1, 2, 3 -55oC, +25oC, +85oC, +125oC - 0.4 V High Impedance Output Leakage Current IOZL or IOZH VDD = 5.5V, VO = GND or VDD, VI = VDD or GND E1 = VDD, E2 = 0V 1, 3 -55oC, +25oC -10 10 µA 2 +85oC -30 30 µA 2 +125oC -60 60 µA Input Leakage Current IIH or IIL VDD = 5.5V, VI = VDD or GND 1, 2, 3 -55oC, +25oC, +85oC, +125oC -1.0 1.0 µA Standby Supply Current IDDSB (Note 3) VDD = 5.5V, IO = 0mA, VI = VDD or GND E1 = VDD, E2 = 0V 1, 3 -55oC, +25oC - 500 µA 2 +85oC- 4 mA 2 +125oC - 10 mA Enable Supply Current IDDEN VDD = 5.5V, IO = 0mA, VI = VDD or GND E1 = 0.0V, E2 = VDD 3 -55oC - 77 mA 1 +25oC - 73 mA 2 +85oC, +125oC - 64 mA Operating Supply Current (Note 2) IDDOP VDD = 5.5V, IO = 0mA, VI = VDD or GND, E2 = VDD, E1 = 0V, f = 2MHz 3 -55oC - 100 mA 1 +25oC - 86 mA 2 +85oC, +125oC - 75 mA Data Retention Supply Current IDDDR VDD = 2.0V, IO = 0mA, VI = VDD or GND E1 = VDD, E2 = 0V 1, 3 -55oC, +25oC- 50 µA 2 +85oC- 1 mA 2 +125oC- 4 mA Functional Tests FT VDD = 4.5V and 5.5V VI = VDD or GND, f = 1MHz 7, 8A, 8B -55oC, +25oC, +85oC, +125oC -- - Noise Immunity Functional Test FN VDD = 4.5, VIL = 0.2 VDD VIH = 0.8 VDD, f = 1MHz 7, 8A, 8B -55oC, +25oC, +85oC, +125oC -- - NOTES: 1. All voltages referenced to device GND. 2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.) 3. In order for this device to be in low power standby mode. E2 must be disabled (low). Spec Number 518729 |
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