824

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

HS-65647RH

Radiation Hardened

8K x 8 SOS CMOS Static RAM

Functional Diagram

TRUTH TABLE

E1

E2

G

W

MODE

X

0

X

X

Low Power Standby

1

1

X

X

Disabled

0111

Enabled

0101

Read

0

1

X

0

Write

AI COL

AI

ROW

I/O0

I/O7

128 X 512

MEMORY ARRAY

ROW

DECODER

INPUT

DATA

CIRCUIT

COLUMN DECODER

COLUMN I/O

W

G

E1

E2

CONTROL

CIRCUIT

Features

• 1.2 Micron Radiation Hardened SOS CMOS

• Latch-up Free

• LET Threshold >250 MEV/mg/cm2

• Low Standby Supply Current 10mA (Max)

• Low Operating Supply Current 100mA (2MHz)

• Fast Access Time 50ns (Max), 35ns (Typ)

• High Output Drive Capability

• Gated Input Buffers (Gated by E2)

• Six Transistor Memory Cell

• Fully Static Design

• Asynchronous Operation

• CMOS Inputs

• 5V Single Power Supply

• Industry Standard JEDEC Pinout

Description

The Intersil HS-65647RH is a fully asynchronous 8K x 8

radiation hardened static RAM. This RAM is fabricated using

the Intersil 1.2 micron silicon-on-sapphire CMOS technology.

This technology gives exceptional hardness to all types of

radiation, including neutron fluence, total ionizing dose, high

intensity ionizing dose rates, and cosmic rays.

Low power operation is provided by a fully static design. Low

standby power can be achieved without pull-up resistors,

due to the gated input buffer design.

August 1995

Spec Number

518729

File Number

2928.2

Ordering Information

PART NUMBER

TEMPERATURE RANGE

PACKAGE

HS1-65647RH-Q

28 Lead SBDIP

HS1-65647RH-8

28 Lead SBDIP

HS1-65647RH/Proto

28 Lead SBDIP

HS1-65647RH/Sample

28 Lead SBDIP

HS9-65647RH-Q

28 Lead Ceramic Flatpack

HS9-65647RH-8

28 Lead Ceramic Flatpack

HS9-65647RH/Proto

28 Lead Ceramic Flatpack

HS9-65647RH/Sample

28 Lead Ceramic Flatpack

HS9A-65647RH-Q

36 Lead Ceramic Flatpack