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HS9-82C12RH Datasheet(PDF) 4 Page - Intersil Corporation |
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HS9-82C12RH Datasheet(HTML) 4 Page - Intersil Corporation |
4 / 8 page 4 Specifications HS-82C12RH TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMPERATURE LIMITS UNITS MIN MAX Input Capacitance CIN VDD = Open, f = 1MHz, All measurements referenced to device ground TA = +25 oC- 8 pF Output Capacitance COUT VDD = Open, f = 1MHz, All measurements referenced to device ground TA = +25 oC- 8 pF Pulse Width TPW VDD = 4.75, VIH = 3.75, VIL = 1.0 9, 10, 11 -55oC, +25oC, +125oC -50 ns Data Set Up Time TSET VDD = 4.75, VIH = 3.75, VIL = 1.0 9, 10, 11 -55oC, +25oC, +125oC -30 ns Data Hold Time TH VDD = 4.75, VIH = 3.75, VIL = 1.0 9, 10, 11 -55oC, +25oC, +125oC -40 ns NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are characterized upon initial design release and upon design changes which would affect these characteristics. TABLE 4. POST 100K RAD ELECTRICAL PERFORMANCE CHARACTERISTICS NOTE: The Post Irradiation test conditions and limits are the same as those listed in Table 1 and Table 2. Spec Number 518063 |
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