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2SJ606-ZJ Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ606-ZJ Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 5 page SMD Type www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ606-ZJ ■ Features ● VDS (V) =-60V ● ID =-83A ● RDS(ON) < 15mΩ (VGS =-10V) ● RDS(ON) < 23mΩ (VGS =-4V) ● Low Ciss: Ciss = 4800 pF (TYP.) Source Body Diode Gate Protection Diode Gate Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current ID -83 Pulsed Drain Current (Note.1) IDM -300 Single Avalanche Current (Note.2) IAS -40 120 1.5 Single Avalanche Energy (Note.2) EAS 160 mJ Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃ V Power Dissipation PD W A Note.1: PW ≤ 10us,Duty Cycle ≤ 1% Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0 Tc = 25℃ Ta = 25℃ |
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