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AO3423-3 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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AO3423-3 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page  SMD Type www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET AO3423 (KO3423) ■ Features ● VDS (V) =-20V ● ID =-2.0 A (VGS =-10V) ● RDS(ON) ＜ 92mΩ (VGS =-10V) ● RDS(ON) ＜ 118mΩ (VGS =-4.5V) ● RDS(ON) ＜ 166mΩ (VGS =-2.5V) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 Continuous Drain Current Ta = 25℃ -2 Ta = 70℃ -2 Pulsed Drain Current (Note.1) IDM -17 Power Dissipation (Note.2) Ta = 25℃ 1.4 Ta = 70℃ 0.9 Thermal Resistance.Junction- to-Ambient t≤10 s 90 Steady State 125 Thermal Resistance.Junction- to-Lead RthJL 60 Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 ID PD W RthJA V ℃ /W A ℃ Note.1:Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. Note.2: The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. |
Similar Part No. - AO3423-3 |
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Similar Description - AO3423-3 |
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