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ICL8212CTY Datasheet(PDF) 8 Page - Intersil Corporation |
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ICL8212CTY Datasheet(HTML) 8 Page - Intersil Corporation |
8 / 14 page 7-168 ICL8211, ICL8212 Typical Performance Curves (ICL8212 ONLY) (Continued) FIGURE 18. OUTPUT SATURATION VOLTAGE AND CURRENT AS A FUNCTION OF TEMPERATURE FIGURE 19. OUTPUT CURRENT AS A FUNCTION OF OUTPUT VOLTAGE FIGURE 20. HYSTERESIS OUTPUT CURRENT AS A FUNCTION OF HYSTERESIS OUTPUT VOLTAGE -55 -25 +5 +35 +65 +95 +125 TEMPERATURE (oC) 0.6 0.5 0.4 0.3 0.2 0.1 0 OUTPUT SAT. CURRENT VOLTAGE SAT. CURRENT V+ = +5V VTH = 1.2V (VO = 4.0V) (IO = 10mA) 40 30 20 10 0 0.1 1.0 10.0 30.0 100.0 OUTPUT VOLTAGE VTH = 1.153V VTH =1.25V VTH = 1.158V TA = +25 oC V+ = +5V 0 -5 -10 -15 -20 -25 -30 -35 -40 -10.00 -1.00 -0.10 -0.01 HYSTERESIS OUTPUT VOLTAGE VT = 1.18V VT = 1.153V VT = 1.152V TA = +25 oC V+ = +10V Detailed Description The ICL8211 and ICL8212 use standard linear bipolar integrated circuit technology with high value thin film resistors which define extremely low value currents. Components Q1 through Q10 and R1, R2 and R3 set up an accurate voltage reference of 1.15V. This reference voltage is close to the value of the bandgap voltage for silicon and is highly stable with respect to both temperature and supply voltage. The deviation from the bandgap voltage is necessary due to the negative temperature coefficient of the thin film resistors (-5000 ppm per oC). Components Q2 through Q9 and R2 make up a constant current source; Q2 and Q3 are identical and form a current mirror. Q8 has 7 times the emitter area of Q9, and due to the current mirror, the collector currents of Q8 and Q9 are forced to be equal and it can be shown that the collector current in Q8 and Q9 is or approximately 1 µA at +25oC Transistors Q5, Q6, and Q7 assure that the VCE of Q3, Q4, and Q9 remain constant with supply voltage variations. This ensures a constant current supply free from variations. The base current of Q1 provides sufficient start up current for the constant source; there being two stable states for this type of circuit - either ON as defined above, or OFF if no start up current is provided. Leakage current in the transistors is not sufficient in itself to guarantee reliable startup. Q4 is matched to Q3 and Q2; Q10 is matched to Q9. Thus the IC and VBE of Q10 are identical to that of Q9 or Q8. To generate the bandgap voltage, it is necessary to sum a voltage equal to the base emitter voltage of Q9 to a voltage proportional to the difference of the base emitter voltages of two transistors Q8 and Q9 operating at two current densities. The total supply current consumed by the voltage reference section is approximately 6 µA at room temperature. A voltage at the THRESHOLD input is compared to the reference 1.15V by the comparator consisting of transistors Q11 through Q17. The outputs from the comparator are limited to two diode drops less than V+ or approximately 1.1V. Thus the base cur- rent into the hysteresis output transistor is limited to about 500nA and the collector current of Q19 to 100µA. In the case of the ICL8211, Q21 is proportioned to have 70 times the emitter area of Q20 thereby limiting the output current to approximately 7mA, whereas for the ICL8212 IC (Q8 or Q9) = 1 x kT In7 R2 q Where k = Boltzman’s Constant q = Charge on an Electron and T = Absolute Temperature in oK Thus 1.5 = VBE (Q9 or Q10) + R3 x kT R2 q which provides: R3 = 12 (approximately.) R2 |
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