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APM9435K Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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APM9435K Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET P-Channel MOSFET APM9435K (APM9435KC) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55℃ -30 Gate-Body leakage current IGSS VDS=0V, VGS=±25V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -1 -2 V VGS=-10V, ID=-4.6A (Note.1) 60 VGS=-4.5V, ID=-2A (Note.1) 95 Input Capacitance Ciss 845 Output Capacitance Coss 120 Reverse Transfer Capacitance Crss 80 Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 11.7 Ω Total Gate Charge Qg 22.5 29 Gate Source Charge Qgs 4.5 Gate Drain Charge Qgd 2 Turn-On DelayTime td(on) 8 17 Turn-On Rise Time tr 8 18 Turn-Off DelayTime td(off) 35 60 Turn-Off Fall Time tf 11 28 Maximum Body-Diode Continuous Current IS -2 A Diode Forward Voltage VSD IS=-2A,VGS=0V (Note.1) -1.3 V ns Zero Gate Voltage Drain Current IDSS μ A mΩ VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-25V, f=1MHz VGS=-10V, VDS=-15V, ID=-4.6A pF nC Note.1: Pulse test ; pulse width≤300μs, duty cycle≤2%. 52 80 |
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