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IRFD1Z2 Datasheet(PDF) 1 Page - Intersil Corporation

Part # IRFD1Z2
Description  0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFD1Z2 Datasheet(HTML) 1 Page - Intersil Corporation

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5-1
Semiconductor
Features
• 0.4A and 0.5A, 60V and 100V
•rDS(ON) = 2.4Ω and 3.2Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD1Z0
HEXDIP
IRFD1Z0
IRFD1Z1
HEXDIP
IRFD1Z1
IRFD1Z2
HEXDIP
IRFD1Z2
IRFD1Z3
HEXDIP
IRFD1Z3
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
File Number
2313.1
IRFD1Z0, IRFD1Z1,
IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,
N-Channel Power MOSFETs


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