IRFR9110 datasheet(4/7 Pages) INTERSIL

Part #	IRFR9110

Description	3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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4-80

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

-10

-7.75

-1

0.01

0.1

1

10

EAS = 140mJ

CONDITIONS:

VDD = -25V, IAS = -3.1A,

L = 21mH, STARTING TJ = 25

oC

STARTING TJ = 150

oC

STARTING TJ = 25

oC

If R = 0

tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

tAV = (L/R) In [(IAS * R) / (1.3 RATED BVDSS - VDD +1]

TAV, TIME IN AVALANCHE (ms)

If R

≠ 0

0

-2

-4

-6

-8

-10

VDS, DRAIN TO SOURCE VOLTAGE (V)

-1

-2

-3

-4

-5

-6

VGS = -5V

VGS = -6V

VGS = -8V

VGS = -7V

VGS = -10V

VGS = -4.5V

VGS = -20V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

TC = 25

oC

0

-2-4-6

VGS, GATE TO SOURCE VOLTAGE (V)

0

-55oC

150oC

25oC

-4

-6

-10

-8

-10

-2

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VDD = -15V

TJ, JUNCTION TEMPERATURE (

oC)

2.0

1.5

1.0

0.5

0.0

-80

-40

0

40

80

120

160

VGS = VDS, ID = -250µA

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

0

40

80

120

180

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VGS = -10V, ID = -3.1A

TJ, JUNCTION TEMPERATURE (

oC)

2.0

1.5

1.0

0.5

0.0

-80

-40

0

40

80

120

160

VGS = VDS, ID = -250µA

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IRFR9110 Datasheet(PDF) 4 Page - Intersil Corporation

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