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SI2323DS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part # SI2323DS
Description  P-Channel Enhancement MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2323DS Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
2
MOSFET
P-Channel Enhancement MOSFET
SI2323DS (KI2323DS)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=-250μA, VGS=0V
-20
V
VDS=-16V, VGS=0V
-1
VDS=-16V, VGS=0V, TJ=55℃
-10
Gate-Body leakage current
IGSS
VDS=0V, VGS=±8V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250μA
-0.4
-1.0
V
VGS=-4.5V, ID=-4.7A
31
39
VGS=-2.5V, ID=-4.1A
41
52
VGS=-1.8V, ID=-2A
54
68
On state drain current
ID(ON)
VGS=-4.5V, VDS=-5V
-20
A
Forward Transconductance
gFS
VDS=-5V, ID=-4.7A
16
S
Input Capacitance
Ciss
1020
Output Capacitance
Coss
191
Reverse Transfer Capacitance
Crss
140
Total Gate Charge
Qg
12.5
19
Gate Source Charge
Qgs
1.7
Gate Drain Charge
Qgd
3.3
Turn-On DelayTime
td(on)
25
40
Turn-On Rise Time
tr
43
65
Turn-Off DelayTime
td(off)
71
110
Turn-Off Fall Time
tf
48
75
5 sec
-1.0
Steady State
-0.6
Diode Forward Voltage
VSD
IS=-1.0A,VGS=0V
-0.7
-1.2
V
Maximum Body-Diode Continuous Current
IS
A
pF
nC
VGS=-4.5V, VDS=-10V, RL=10Ω,RGEN=6Ω
ID=-1.0A *1
ns
VGS=0V, VDS=-10V, f=1MHz *1
VGS=-4.5V, VDS=-10V, ID=-4.7A *1
Zero Gate Voltage Drain Current
IDSS
μ
A
RDS(On)
Static Drain-Source On-Resistance
*1Pulse test: PW ≤ 300us duty cycle ≤ 2%.
Marking
Marking
D3*


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