SI2325DS-3 datasheet(1/5 Pages) KEXIN

Part #	SI2325DS-3

Description	P-Channel Enhancement MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

P-Channel Enhancement MOSFET

■

Features

●

VDS (V) =-150V

●

ID =-0.69A (VGS =-10V)

●

RDS(ON) ＜ 1.2Ω (VGS =-10V)

●

RDS(ON) ＜ 1.3Ω (VGS =-6V)

G

S

D

2

3

1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current

Ta = 25℃

-0.69

-0.53

Ta = 70℃

-0.55

-0.43

Pulsed Drain Current

IDM

Single-Pluse Avalanche Current

L=1.0mH

IAS

Single-Pulse Avalanche Energy

L=1.0mH

EAS

mJ

Power Dissipation

Ta = 25℃

1.25

0.75

Ta = 70℃

0.8

0.48

Thermal Resistance.Junction- to-Ambient t≤5 sec

Steady State

Thermal Resistance.Junction- to-Foot

RthJF

Junction Temperature

TJ

Storage Temperature Range

Tstg

4.5

A

1.01

℃

100

166

50

150

-55 to 150

W

RthJA

-150

±

20

ID

V

℃

/W

-1.6

PD

SI2325DS (KI2325DS)

1. Gate

2. Source

3. Drain

0.4 +0.1

-0.1

2.9 +0.2

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.2

1

2

3

Unit: mm

SOT-23-3

0.15 +0.02

-0.02

(TJ = 150℃) *1

*1 Surface Mounted on 1” x 1” FR4 Board.

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SI2325DS-3 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

SI2325DS-3 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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