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SI4558DY Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

Part # SI4558DY
Description  Complementary Power Trench MOSFET
Download  6 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI4558DY Datasheet(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
3
MOSFET
Complementary Power Trench MOSFET
SI4558DY (KI4558DY)
0
6
12
18
24
30
0
1
2
3
4
5
s
c
it
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Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (。C)
0
2
4
6
8
10
0
4
8
12
16
0
0.4
0.8
1.2
1.6
2.0
–50
0
50
100
150
0
0.025
0.050
0.075
0.100
0.125
0.150
0
6
12
18
24
30
0
300
600
900
1200
1500
0
6
12
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30
0
6
12
18
24
30
0
1
2
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6
–55 C
VGS = 10 V
Crss
Coss
Ciss
VGS = 4.5 V
TC = 125。C
VDS = 15 V
ID = 6 A
VGS = 10 V
ID = 6 A
25 C
4 V
3 V
VGS = 10, 9, 8, 7, 6, 5 V
。
。
■
N-MOSFET Typical Characterisitics


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