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CR3AS-8UE Datasheet(PDF) 2 Page - Renesas Technology Corp |
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CR3AS-8UE Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 7 page  CR3AS-8UE Preliminary R07DS1116EJ0100 Rev.1.00 Page 2 of 6 Sep 05, 2013 Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current IRRM — — 1.0 mA Tj = 125 °C, VRRM applied RGK= 1 kΩ Repetitive peak off-state current IDRM — — 1.0 mA Tj = 125 °C, VDRM applied RGK= 1 kΩ On-state voltage VTM — — 1.4 V Tj = 25 °C, ITM = 4 A instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25 °C, VD = 6 V, IT = 0.1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125 °C, VD = 1/2 VDRM RGK= 1 kΩ Gate trigger current IGT 1 — 100 μA Tj = 25 °C, VD = 6 V, IT = 0.1 A Holding current IH — — 5.0 mA Tj = 25°C, VD = 12 V RGK= 1 kΩ Thermal resistance Rth(j-c) — — 4.0 °C/W Junction to case Note2 Notes: 2. The measurement point for case temperature is at anode tab. |
Similar Part No. - CR3AS-8UE_15 |
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Similar Description - CR3AS-8UE_15 |
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