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R2A20056BM Datasheet(PDF) 4 Page - Renesas Technology Corp |
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R2A20056BM Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 38 page R2A20056BM Apr 15,2013 R03DS0075EJ0100 Rev. 1.23 Page 4 of 37 *1 Within 200µs *2 This value is at 75mm x 75mm x 1mm of FR4 board with 4 layers at Ta=25 degC. It depends on the board condition. (Ta=25degC, unless otherwise specified.) (Ta=25degC, unless otherwise specified.) Absolute maximum ratings Recommended operating condition Symbol Items Ratings Unit Vmax Input voltage IN -0.3 to 25 V Other Pin -0.3 to 6.5 V IINmax Input current IN 2.5 A IN (peak) *1 4.0 A Iomax Output current SYS 2.5 A SYS (peak) *1 4.0 A BAT 2.5 A BAT (peak) *1 4.0 A THVDD 1 mA Iosmax Output sink current /STAT,/POK 15 mA Topr Operating temperature range -30 to 85 degC Tstg Storage temperature range -40 to 125 degC Tj Junction temperature -30 to 125 degC Pd Power dissipation *2 2.12 W Symbol Items Min Max Unit VIN IN input voltage 4.5 5.5 V IIN IN input current - 1.5 A ISYS SYS output current - 2 A IBAT BAT output current - 2 A ICHG Charge current - 1 A Tj Junction temperature -30 125 degC RICHG Resistor value for setting charge current 1.6 24 Kohm |
Similar Part No. - R2A20056BM_15 |
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Similar Description - R2A20056BM_15 |
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