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BC636 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BC636 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  -Jun-2002 Rev. A Page 1 of 2 01 Elektronische Bauelemente BC636/638/640 PNP Type Power Dissipation: PCM: 0.83 mW (Tamb=25 C) PARAMETERS SYMBOL TEST CONDITIONS UNIT Collector - emitter breakdown voltage Collector - emitter saturation voltage Base - emitter voltage Transition frequency Collector cut-off current Emitter cut-off current DC current gain o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified) V(BR)CEO VCE(sat) VBE(ON) f T ICBO IEBO hFE(1) hFE(2) hFE(3) BC636 BC636-10 IC=10mA, IB=0 VCB=-30V, IE=0 VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA VCE=-5V, IC=-50mA, f=100MHz VEB=-5V, IB=0 BC638 BC636-16, BC638-16, BC640-16 BC636-10 63-160 100-250 BC636-16, BC638-16, BC640-16 BC640 V V V TYP 100 MAX -0.1 -0.1 -0.5 -1 160 250 MIN -45 -60 -80 40 63 100 25 V V MHz µA µA RANK RANGE CLASSIFICATION OF hFE(2) BC636 BC638 BC640 BC636 BC638 BC640 o MAXIMUM RATINGS FEATURE (TA=25 C unless otherwise specified) PARAMETERS SYMBOLS VALUES UNIT Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Thermal Resistance from Junction to Ambient o VCEO VCBO VEBO IC IB ICP RθJA* TJ,TSTG V V V V V V V A A mA K/w C o -45 -60 -80 -45 -60 -100 -5 -1 -1.5 100 150 150, -65 ~ 150 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Plastic Encapsulate Transistors 4.55±0.2 3.5±0.2 2.54±0.1 (1.27 Typ.) 0.46 +0.1 –0.1 0.43 +0.08 –0.07 13 2 1: Emitter 3: Base 2: Collector 1.25–0.2 +0.2 TO-92 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
Similar Part No. - BC636_15 |
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Similar Description - BC636_15 |
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