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ADUC7032-8L Datasheet(PDF) 7 Page - Analog Devices

Part # ADUC7032-8L
Description  Integrated Precision Battery Sensor for Automotive System
Download  120 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADUC7032-8L Datasheet(HTML) 7 Page - Analog Devices

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ADuC7032-8L
Rev. A | Page 7 of 120
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
LIN I/O GENERAL
Baud Rate
1000
20,000
Bits/sec
VDD
Supply voltage range at which the LIN interface is functional
7
18
V
Input Capacitance
5.5
pF
LIN Comparator Response
Time1
Using 22 Ω resistor
38
90
μs
ILIN DOM MAX
Current limit for driver when LIN bus is in dominant state;
VBAT = VBAT(MAX)
40
200
mA
ILIN_PAS_REC
Driver off; 7.0 V < VBUS < 18 V; VDD = VLIN − 0.7 V
−20
+20
μA
ILIN_PAS_DOM1
Input leakage VLIN = 0 V
−1
mA
ILIN_NO_GND30
Control unit disconnected from ground,
GND = VDD; 0 V < VLIN < 18 V; VBAT = 12 V
−1
+1
mA
VLIN_DOM1
LIN receiver dominant state, VDD > 7.0 V
0.4 VDD
V
VLIN_REC1
LIN receiver recessive state, VDD > 7.0 V
0.6 VDD
V
VLIN_CNT1
LIN receiver center voltage, VDD > 7.0 V
0.475 VDD
0.5 VDD
0.525 VDD
V
VHYS1
LIN receiver hysteresis voltage
0.175 VDD
V
VLIN_DOM_DRV_LOSUP1
LIN dominant output voltage; VDD = 7.0 V
RL 500 Ω
1.2
V
RL 1000 Ω
0.6
V
VLIN_DOM_DRV_HISUP1
LIN dominant output voltage; VDD = 18 V
RL 500 Ω
2
V
RL 1000 Ω
0.8
V
VLIN_RECESSIVE
LIN recessive output voltage
0.8 VDD
V
VBAT Shift30
0
0.1 VDD
V
GND Shift30
0
0.1 VDD
V
RSLAVE
Slave termination resistance
20
29
47
VSERIAL DIODE30
Voltage drop at the serial diode, DSer_Int
0.4
0.7
1
V
Transmit Propagation Delay1
VDDMIN = 7 V
4
μs
Bus load conditions (CBUS
||RBUS):
1 nF
||1 kΩ; 6.8 nF||660 Ω; 10 nF||500 Ω
Symmetry of Transmit
Propagation Delay1
VDDMIN = 7 V
−2
+2
μs
Receive Propagation Delay1
VDDMIN = 7 V
6
μs
Symmetry of Receive
Propagation Delay1
VDDMIN = 7 V
−2
+2
μs
LIN v.1.3 SPECIFICATION
Bus load conditions (CBUS
||RBUS):
1 nF
||1 kΩ ; 6.8 nF||660 Ω; 10 nF||500 Ω
Slew rate
dt
dV 1
Dominant and recessive edges, VBAT = 18 V
1
2
3
V/μs
Slew rate
dt
dV 1
Dominant and recessive edges, VBAT = 7 V
0.5
3
V/μs
tSYM1
Symmetry of rising and falling edge, VBAT = 18 V
−5
+5
μs
Symmetry of rising and falling edge, VBAT = 7 V
−4
+4
μs
LIN 2.0 SPECIFICATION
Bus load conditions ( CBUS
||RBUS ):
1 nF
||1 kΩ; 6.8 nF||660 Ω; 10 nF||500 Ω
D1
Duty Cycle 1
0.396
THREC(MAX) = 0.744 × VBAT,
THDOM(MAX) = 0.581 × VBAT,
VSUP = 7.0 V…18 V; tBIT = 50 μs,
D1 = tBUS_REC(MIN)/(2 × tBIT)
D2
Duty Cycle 2
THREC(MIN) = 0.284 × VBAT,
THDOM(MIN) = 0.422 × VBAT,
VSUP = 7.0 V…18 V; tBIT = 50 μs,
D2 = tBUS_REC(MAX)/(2 × tBIT )
0.581


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