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BCX56 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCX56 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente BCX56 1A , 100V NPN Plastic Encapsulated Transistor 25-Oct-2012 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector BCP56 = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package General Purpose Application CLASSIFICATION OF hFE(2) Product-Rank BCX56-10 BCX56-16 Range 63~160 100~250 MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current ICM 1 A Collector Power Dissipation PC 1.2 W Maximum Junction to Ambient RθJA 250 °C / W Junction & Storage Temperature TJ, TSTG -65~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V(BR)CBO 100 - - V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=10μA, IC=0 Collector Cut-Off Current ICBO - - 0.1 μAVCB=30V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 μAVEB=5V, IC=0 BCX56 63 - - VCE=2V, IC=5mA BCX56-10 63 - 250 VCE=2V, IC=150mA DC Current Gain BCX56-16 hFE 40 - - VCE=2V, IC=500mA Transition frequency fT 100 - - MHz VCE=5V, IC=10mA Collector-Emitter Saturation voltage VCE(sat) - - 500 mV IC=500mA, IB=50mA Base-emitter voltage VBE(ON) - - 1 V VCE=2V, IC=500mA Package MPQ Leader Size SOT-89 1K 7 inch SOT-89 A E C D B K H F G L J 1 2 3 4 B C E Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.25 2.60 K 0.32 0.52 E 1.50 1.85 L 0.35 0.44 F 0.89 1.20 |
Similar Part No. - BCX56_15 |
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Similar Description - BCX56_15 |
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