RFM3N50 datasheet(7/10 Pages) INTERSIL

Part #	RFM3N50

Description	3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFM3N45

RFM3N50

RFP3N45

RFP3N50

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . VDS

450

500

450

500

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . VDGR

450

500

450

500

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . ID

3333

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . IDM

5555

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD

75

60

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.6

0.48

W/oC

Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . Tpkg

300

260

300

260

300

260

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

RFM3N45, RFP3N45

450

-

V

RFM3N50, RFP3N50

500

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA, (Figure 7)

2.0

-

4.0

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

1

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

oC-

-

25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 3A, VGS = 10V, (Figures 5, 6)

-

3

Ω

Drain to Source On Voltage (Note 2)

VDS(ON)

ID = 3A, VGS = 10V

-

9.0

V

Turn-On Delay Time

td(ON)

VDD = 250V, ID ≈ 1.5A, RG = 50Ω, VGS = 10V

RL = 165Ω

(Figures 10, 11, 12)

-30

45

ns

Rise Time

tr

-40

60

ns

Turn-Off Delay Time

td(OFF)

-

90

135

ns

Fall Time

tf

-50

75

ns

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

-

750

pF

Output Capacitance

COSS

-

150

pF

Reverse Transfer Capacitance

CRSS

-

100

pF

Thermal Resistance, Junction to Case

RθJC

RFM3N45, RFM3N50

-

1.67

oC/W

RFP3N45, RFP3N50

-

2.083

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 1.5A

-

1.4

V

Reverse Recovery Time

trr

ISD = 4A, dISD/dt = 100A/µs

-

800

-

ns

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

RFM3N45, RFM3N50, RFP3N45, RFP3N50

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