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NCE3035G Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE3035G Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
1 / 7 page NCE3035G Pb Free Product http://www.ncepower.com Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Secondary side synchronous rectifier ● High side switch in POL DC/DC converter 100% UIS TESTED! Schematic diagram Marking and pin assignment DFN 5x6 EP top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE3035G NCE3035G DFN 5x6 EP - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 35 A Pulsed Drain Current IDM 120 A Maximum Power Dissipation PD 40 W Derating factor 0.32 W/℃ Single pulse avalanche energy (Note 5) EAS 150 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ |
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