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KSD471A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # KSD471A
Description  General Purpose Transistor
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

KSD471A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
KSD471A
NPN Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-200
7 Rev. A
Page 1 of
2
2.54±0.1
(1.27 T yp.)
1
3
2
1: E mitter
2: B ase
3: C ollector
1.25±0.2
4.55±0.2
3.5±0.2
0.46±0.1
0.43+0.08
…0.07
TO-92
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
0.8
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100uA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=30V, IE=0
0.1
μA
DC current gain
hFE
VCE=1V, IC=100mA
70
400
Collector-emitter saturation voltage
VCE(sat)
IC=1A, IB=0.1A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB=0.1A
1.2
V
Output Capacitance
Cob
VCB=6V, IE=0,f=1MHZ
16
pF
Transition frequency
fT
VCE=6V, IC=10mA
130
MHz
CLASSIFICATION OF hFE
Rank
O
Y
G
Range
70-140
120-240
200-400
FEATURES
Complement to KSB564A
Collector Current : IC = 1A
Collector Dissipation : PC = 800mW
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


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